【24h】

A Model for Comprehensive Studies of Porosity in Mesoporous Low-K Dielectrics

机译:介孔低K电介质中孔隙率的综合研究模型

获取原文
获取原文并翻译 | 示例

摘要

The successful integration of a porous low dielectric constant (k) material as an interlevel dielectric depends on the morphology of the embedded porosity. Simple site percolation models are utilized here to investigate porosity properties of low-k dielectrics with respect to the current technology trends. Significant differences between two generations of porous dielectrics, k < 2.4 and k<2.1, are found. The porosity fraction in the latter is above the percolation threshold, which may have serious impact on the materials physical properties and its compatibility with production steps.
机译:多孔低介电常数(k)材料作为层间电介质的成功集成取决于所嵌入孔隙的形态。这里使用简单的站点渗流模型来研究低k电介质相对于当前技术趋势的孔隙率特性。发现两代多孔介电材料k <2.4和k <2.1之间存在显着差异。后者中的孔隙率高于渗滤阈值,这可能严重影响材料的物理性能及其与生产步骤的相容性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号