HIGH DENSITY PLASMA CHEMICALLY VAPOR DEPOSITED PHOSPHOSILICATE GLASS FILMS FOR ULSI DEVICE APPLICATIONS

摘要

Properties of phosphosilicate glass films deposited at High Density Plasma (HDP) conditions and deposition temperature 520 and 625℃ have been studied for film application as a Pre Metal Dielectric in sub-quarter micron ULSI device technology. Summary of studied film properties is presented. Films have been found to provide void-free gap-fill for "rectangular" in section device structures with gap spacing G_(critical) ～0.16 μm and aspect ratio AR_(critical)～3.1. Results of gap-fill capability study have been described with an empirical linear dependence AR_(critical)=k X G_(critical), where value k was found to be a function of HDP deposition conditions. To achieve void-free HDP film gap-fill capability for structures with gaps as low as 0.1 μm and aspect ratios about 4 and higher, top corner rounding of structures and side wall slope less than 90°need to be implemented.