Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

摘要

Embedded magnetoresistive random access memory (MRAM) with multi-level interconnects necessitates that magnetic tunnel junction (MTJ) devices have a thermal stability of 350 ℃ or higher during fabrication. We have improved thermal stability of MRAM device