PREPARATION OF IRON OXIDE THIN FILMS BY CHEMICAL VAPOR DEPOSITION FOR NON-VOLATILE RESISTANCE RANDOM ACCESS MEMORY DEVICES

摘要

A method for fabricating an iron oxide thin film for a non-volatile ReRAM(resistance random access memory) device by a chemical deposition method is provided to embody an excellent resistance switching phenomenon by fabricating an iron oxide thin film having low surface roughness, a uniform growth surface and no carbon contamination. A substrate is introduced into a chemical deposition reactor. A Fe source and an O source are supplied to fabricate a FexOy thin film. The Fe source and the O source are supplied by a MOCVD(metal organic chemical vapor deposition) method for simultaneously supplying the Fe source and the O source or by an ALD(atomic layer deposition) method for alternately supplying the Fe source and the O source.