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PREPARATION OF IRON OXIDE THIN FILMS BY CHEMICAL VAPOR DEPOSITION FOR NON-VOLATILE RESISTANCE RANDOM ACCESS MEMORY DEVICES
PREPARATION OF IRON OXIDE THIN FILMS BY CHEMICAL VAPOR DEPOSITION FOR NON-VOLATILE RESISTANCE RANDOM ACCESS MEMORY DEVICES
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机译:用于非挥发性电阻随机存取存储器的化学气相沉积法制备氧化铁薄膜
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摘要
A method for fabricating an iron oxide thin film for a non-volatile ReRAM(resistance random access memory) device by a chemical deposition method is provided to embody an excellent resistance switching phenomenon by fabricating an iron oxide thin film having low surface roughness, a uniform growth surface and no carbon contamination. A substrate is introduced into a chemical deposition reactor. A Fe source and an O source are supplied to fabricate a FexOy thin film. The Fe source and the O source are supplied by a MOCVD(metal organic chemical vapor deposition) method for simultaneously supplying the Fe source and the O source or by an ALD(atomic layer deposition) method for alternately supplying the Fe source and the O source.
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