Mosaic structure and cathodoluminescenceof GaN epilayer grown by lp-movpe

机译：lp-mov法生长的GaN外延层的镶嵌结构和阴极发光

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We have studied the growth of GaN on (0001) sapphire and (111) spinel substrates by LP - MOVPE and compared the mosaic structure and cathodoluminescence for the heteroepitaxial films of GaN grown on these substrates.

机译：我们已经研究了LP-MOVPE在（0001）蓝宝石和（111）尖晶石衬底上GaN的生长，并比较了在这些衬底上生长的GaN异质外延膜的镶嵌结构和阴极发光。

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《Symposium on Gallium Nitride and Related Materials II April 1-4,1997,San Francisco,California,U.S.A.》|1997年|p.207-211|共5页
会议地点 San Francisco CA(US)
作者
Shukun Duan; Xuegong Teng; Yenran Li; Yutian Wang; Peide Han; Dacheng Lu;
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正文语种 eng
中图分类金属学与金属工艺;
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Mosaic structure and cathodoluminescenceof GaN epilayer grown by lp-movpe

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