Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation

摘要

Hydrogen implantation has been used to anneal defects produced in p-type silicon by boron implantation. Boron implantation is performed with an energy of 300 keV to a dose of 1x10~9 cm~(-2). Deep level transient spectroscopy measurements show the production of four hole traps (E_v + 0.21, 0.35, 0.50, 0.55 eV) by boron implantation. Subsequent hydrogen implantation is performed with energies of 60, 90, 120 and 150 keV to a dose of 2x10~(10) cm~(-2). Among four traps produced by boron implantation, the most significant effect of hydrogen implantation is observed on one trap (E_v + 0.50 eV). A 62% decrease in concentration is caused for this trap by hydrogen implantation with energies of 120 and 150 keV. This partial annealing is ascribed to the reaction of boron-implantation-induced defects with point defects produced by hydrogen implantation.