【24h】

Co-doping Approach for p-type ZnO with Combinatorial Laser MBE Method

机译:组合激光MBE法共掺杂p型ZnO

获取原文
获取原文并翻译 | 示例

摘要

We show here three different ways of combinatorial experiments for achieving precise control of dopant concentration in ZnO thin films. Alternating ablation of highly pure single crystal target and ceramics target doped with concentrated Ga dopant yielded in a systematic control of Ga concentration with keeping minimal contamination of undesired impurity. Secondary ion mass spectroscopy for a stack of several ZnO films grown at different temperatures under a constant exposure of N radical gave us a systematic calibration curve for the N concentration. With using a special heating method to give a controlled temperature gradient on a substrate, we demonstrate that continuous spread of N concentration can be built in a film on a substrate with keeping constant Ga concentration. Such systematic experiments taking into account the "combinatorial" concept enable us to make ZnO films with controlled dopant concentrations.
机译:我们在这里展示了三种不同的组合实验方法,可实现对ZnO薄膜中掺杂剂浓度的精确控制。高纯单晶靶材和掺杂有浓Ga掺杂剂的陶瓷靶材的交替烧蚀可系统地控制Ga的浓度,同时保持对不希望有的杂质的污染最小。在恒定暴露的N自由基下,在不同温度下生长的数个ZnO薄膜的堆垛的二次离子质谱分析为我们提供了N浓度的系统校准曲线。通过使用特殊的加热方法在基板上提供受控的温度梯度,我们证明了在保持Ga浓度恒定的情况下,可以在基板上的膜中建立N浓度的连续分布。这种考虑“组合”概念的系统实验使我们能够制造具有受控掺杂剂浓度的ZnO薄膜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号