PARAMETERIZATION OF TRANSIENT MODELS OF DEFECT DYNAMICS IN CZOCHRALSKI SILICION CRYSTAL GROWTH

摘要

A transient model for point defect dynamics during Czochralski silicon crystal growth is parameterized using detailed experimental data generated under varying crystal growth conditions. Simulated Annealing is used to perform the model parameterization because of the complex nature of the defined objective functions. It is shown that the method is robust and despite the computational expense associated with a large number of function evaluations, can be readily used in multiple dataset, multiple objective function environments.