首页> 外文会议>Symposium on Combinatorial and Artificial Intelligence Methods in Materials Science, Nov 26-29, 2001, Boston, Massachusetts, U.S.A. >PARAMETERIZATION OF TRANSIENT MODELS OF DEFECT DYNAMICS IN CZOCHRALSKI SILICION CRYSTAL GROWTH
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PARAMETERIZATION OF TRANSIENT MODELS OF DEFECT DYNAMICS IN CZOCHRALSKI SILICION CRYSTAL GROWTH

机译:直晶硅晶体生长瞬态动力学瞬态模型的参数化

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摘要

A transient model for point defect dynamics during Czochralski silicon crystal growth is parameterized using detailed experimental data generated under varying crystal growth conditions. Simulated Annealing is used to perform the model parameterization because of the complex nature of the defined objective functions. It is shown that the method is robust and despite the computational expense associated with a large number of function evaluations, can be readily used in multiple dataset, multiple objective function environments.
机译:使用在不同晶体生长条件下生成的详细实验数据,可以对Czochralski硅晶体生长过程中点缺陷动力学的瞬态模型进行参数化。由于定义的目标函数很复杂,因此使用模拟退火来执行模型参数化。结果表明,该方法是鲁棒的,尽管与大量函数评估相关联的计算量很大,但可以轻松地在多个数据集,多个目标函数环境中使用。

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