Modeling of transient point defect dynamics in Czochralski silicon crystals

摘要

Interinsic point defects control the formation of grown-in defects in silicon crystals. Under steady state conditions, the type of the prevailing point defect species is exclusively determined by the ratio of pull rate and temperature gradient in the crystal at the interface. In this study, simulations have been performed for transient growing processes where the pulling rate has been abruptly changed.