NANOELECTROMECHANICAL SILICON CARBIDE RESONATORS FOR ULTRA HIGHFREQUENCY APPLICATIONS

摘要

Nanomechanical resonators with fundamental moderesonance frequencies in the Ultra High Frequency (UHF) bandwere fabricated from single crystalline 3C-SiC thin filmsepitaxially grown on Si substrates using a combination of electronbeam lithography and micromachining techniques. Resonantfrequencies of doubly clamped resonator pairs were measured bymagnetomotive transduction combined with a balanced bridgereadout circuit. Resonant frequencies as high as 632 MHz wererecorded.