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Modeling for Internal Transparent Collector IGBT

机译:内部透明集电极IGBT的建模

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Internal transparent collector (ITC) insulated gate bipolar transistor (IGBT) is a new type IGBT. Its structure is quite similar to that of the PT-IGBT, but a very low carrier lifetime control region (LCLCR) is introduced in the collector region near the p-collector/n-buffer junction. In this paper, an analysis model for ITC-IGBT is proposed. The collector current density is given. It is function of carrier injected level, device physical parameters (carrier diffusion coefficient, diffusion length), and technology parameters (Doping level, base width, and position of LCLCR). The influence of the position of LCLCR, as well as carrier lifetime in it, on device's characteristics are discussed. For certain current density, if carrier lifetime in LCLCR is less than 0.01ns, and LCLCR is localized at 0.9μm away from base/collector junction, hole injection level decreases with temperature. Considering the mobility also decreases with temperature, device's on-state voltage VON will have positive temperature coefficient. The device is rugged; If carrier lifetime in LCLCR is about 1ns, and LCLCR is just under base/collector junction, the hole injection level increase with temperature. Even if the mobility's decrease with temperature can not compensate the reduction of VON, the decrease degree of VON is much less than that of PT-IGBT. The device is more rugged than PT-IGBT. Optimum the position and carrier lifetime of LCLCR can make the device either rugged or less temperature sensitive (VON increase little with temperature). The position and carrier lifetime of LCLCR also plays important role for device's turn-off feature. When the position of LCLCR is settled, the lower carrier lifetime in LCLCR is, the shorter falling time will be. But when carrier lifetime in LCLCR is less than 10ps, the falling time is seldom influenced by the carrier lifetime in LCLCR. Further reduction of turn-off time can be obtained by reducing the distance of LCLCR to the collector/base junction.
机译:内部透明集电极(ITC)绝缘栅双极晶体管(IGBT)是一种新型IGBT。它的结构与PT-IGBT非常相似,但是在p-集电极/ n缓冲结附近的集电极区域引入了非常低的载流子寿命控制区(LCLCR)。本文提出了一种ITC-IGBT的分析模型。给出了集电极电流密度。它是载流子注入能级,器件物理参数(载流子扩散系数,扩散长度)和技术参数(掺杂能级,基极宽度和LCLCR的位置)的函数。讨论了LCLCR的位置以及其中的载流子寿命对器件特性的影响。对于一定的电流密度,如果LCLCR中的载流子寿命小于0.01ns,并且LCLCR位于距基极/集电极结0.9μm的位置,则空穴注入能级会随温度降低。考虑到迁移率也随温度降低,器件的导通电压VON将具有正温度系数。该设备坚固耐用;如果LCLCR中的载流子寿命约为1ns,并且LCLCR恰好在基极/集电极结下方,则空穴注入能级会随温度升高而增加。即使迁移率随温度的下降不能补偿VON的下降,但VON的下降程度远小于PT-IGBT。该器件比PT-IGBT更坚固。 LCLCR的最佳位置和载流子寿命可以使器件坚固耐用或对温度不敏感(VON随温度升高很少)。 LCLCR的位置和载流子寿命对于器件的关闭功能也起着重要作用。当LCLCR的位置稳定后,LCLCR中的载流子寿命越短,下降时间就越短。但是,当LCLCR中的载流子寿命小于10ps时,下降时间很少受到LCLCR中载流子寿命的影响。通过减少LCLCR到集电极/基极结的距离,可以进一步减少关断时间。

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