Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

摘要

AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability. Integration results with completely filled structures obtained demonstrate a high potential for use in advanced interconnect technologies.