Strain and charge distribution in GaN/AlN/GaN semiconductor- insulator-semiconductor structure

摘要

We demonstrate that the measured C-V characteristics of a symmetrically doped n-type GaN-AlN-GaN Semiconductor-Insulator-Semiconductor (SIS) structures with a thin A1N layer are strongly asymmetrical in qualitative agreement with our theory. The degree of asymmetry depends on the thickness of the A1N film and on the degree of the elastic strain relaxation. Using the measured C-V data and our theory, we determined the degree of the elastic strain relaxation as a function of thickness. The elastic strain relaxation of our SIS structure is compared with that of GaN/AIN superlattices.