Application of 3-D X-ray Computed Tomography for the In-Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth

摘要

In this paper, we present for the first time an in-situ 3-D reconstruction of the SiC crystal growth interface using X-ray computed tomography (CT). We show that the shape of the growth interface can be determined with high precision at growth temperatures above 2100 ℃ in a conventional 3" PVT (physical vapor transport) growth system.