Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu,;
slurry; flatness; chemical mechanical polishing; CMP; MRR; surface roughness; surface damage;
机译:十字图案抛光垫化学机械抛光不同浆料浓度下蓝宝石晶片的磨料去除深度研究
机译:电镀NiFe 45/55的化学机械抛光中各种氧化铝基抛光液的去除机理研究
机译:轴向Si面6H-SiC晶片的化学机械抛光(CMP),以获得原子平坦的无缺陷表面
机译:化学机械抛光中的材料去除区:浆料化学品,磨料尺寸分布和晶圆垫接触面积的偶联效果
机译:化学机械抛光中浆料流和材料去除的多尺度建模。
机译:浆料组成对金刚石薄膜化学机械抛光的影响
机译:浆料对化学机械抛光过程中材料去除机理的基本作用研究