A boosted common source line program scheme in channel stacked NAND flash memory with layer selection by multilevel operation

摘要

In order to obtain high channel boosting potential and to reduce a program disturbance in channel stacked type with layer selection by multi-level operation (LSM), a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. To verify the validity of the new method in LSM, TCAD simulations are performed. Through TCAD simulation, it is revealed that the program disturbance characteristics is significantly improved by the proposed scheme.