机译:使用通道堆叠NAND闪存中的公共源线并通过多级操作进行层选择的编程方案
Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;
Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;
Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;
Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;
Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;
3D stacked NAND flash memory; Channel stacked NAND flash memory; Layer selection by multi-level operation (LSM);
机译:多级操作选择层的通道堆叠NAND闪存程序扰动分析
机译:通道堆叠NAND闪存中用于层选择的串选择晶体管的新编程方法
机译:低压操作NAND闪存的源线编程方案
机译:通过多层操作进行层选择的通道堆叠NAND闪存中的增强型公共源线编程方案
机译:用于非均匀信号源和带有存储器的二进制通道的线性编程解码
机译:用于减少Z干扰的垂直NAND闪存的新型程序方案
机译:具有多字符串操作的铁电存储器垂直通道NAND闪光的新颖结构和操作方案