EVALUATION OF ESM-U PAD WITH VARIED SILICA SLURRIES FOR OXIDE CMP PROCESS

摘要

This study is to evaluate an alternative polishing pad for oxide CMP (Chemical Mechanical Planarization) process. An ESM-U pad was selected to be characterized using various silica slurries for this evaluation. Both fumed and colloidal types of silica slurry can achieve a removal rate over 3000 A/min; however, fumed silica slurry required higher linear velocity to obtain the desired removal rate than colloidal silica slurry. Overall, colloidal silica slurry can easily achieve the average WIWNU%(1σ) less than 3.0% for both contour scans at 3mm-EE and 5mm-EE and one diameter scan at 2mm-EE. The pad profile can also maintain a flat profile after 65 minutes of pad conditioning with 4.5 mils of pad removal.