HfO_2/Al_2O_3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line

摘要

We report on electrical characteristics of HfO_2/Al_2O_3 gate dielectric on InGaAs as a junction of Al_2O_3 ALD cycles. We also investigate the effect of a NH_3 treatment in a 300mm PEALD chamber equipped with a capacitive plasma. It is shown that 8 Al_2O_3 cycles are required to achieve a high level capacitance (1.75μF/cm~2) and an interface trap density (D_(it)) around 6×10~(12)cm~(-2)eV~1. The NH_3 plasma treatment through an Al_2O_3 layer is able to integrate nitrogen at the InGaAs interface and to form an oxynitride GaO_xN_y.without deterioration of the C-V characteristics.