Department of Material Science and Engineering, University of California, Los Angeles, California 90095, USA;
Department of Material Science and Engineering, University of California, Los Angeles, California 90095, USA;
Department of Material Science and Engineering, University of California, Los Angeles, California 90095, USA;
Department of Material Science and Engineering, University of California, Los Angeles, California 90095, USA;
Department of Material Science and Engineering, University of California, Los Angeles, California 90095, USA;
机译:GaAs衬底上直接晶圆键合的InP外延层的表面处理和电性能
机译:晶圆键合InP / GaAs衬底上的InGaAs量子阱
机译:使用固体源分子束外延技术在InP(001)错切衬底上生长InGaAs太阳能电池
机译:误生基材对INP和GaAs晶片粘结结构电导率的影响
机译:切角对晶片键合串联太阳能电池直接晶片键合的n-砷化镓/ n-砷化镓结构电导率的影响
机译:硅衬底的电导率和取向对热化学气相沉积合成多壁碳纳米管的影响
机译:具有硫化物钝化作用的晶片键合的p-GaAs / n-InP界面的电性能得到改善
机译:Gaas和Inp衬底上生长的分子束外延Insb和Inas(X)sb(1-X)的表面形貌和电学特性