Investigations on Bond Strength Development of Plasma Activated Direct Wafer Bonding with Annealing

摘要

In order to clarify the mechanism behind the bond strength enhancement at low temperatures by plasma activation the bond strength development with annealing temperature was systematically investigated. The study consisted of bonding experiments on the material system Si-SiO_2 under varying process conditions. Combining experimental findings with established models we developed a better understanding of the bonding process which helps explaining the experimentally found behavior. Based on this improved understanding we can predict that plasma activated (PA) wafer bonding can be successfully employed for a larger group of materials than it is currently used.