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Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process
Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process
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机译:通过直接晶圆键合和受约束的键合强化工艺完成器件层转移,而不会排除边缘
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摘要
More complete bonding of wafers may be achieved out to the edge regions of the wafer by constrained bond strengthening of the wafers in a pressure bonding apparatus after direct wafer bonding. The pressure bonding process may be accompanied by the application of not above room temperature.
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