Nanophotonics Laboratory, St Petersburg Academic University of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation;
Nanophotonics Laboratory, St Petersburg Academic University of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation,Saint-Petersburg State Polytechnical University, Saint-Petersburg 195251, Russian Federation;
Nanophotonics Laboratory, St Petersburg Academic University of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation,Saint-Petersburg State Polytechnical University, Saint-Petersburg 195251, Russian Federation,Microelectronics Laboratory, Ioffe Physico-Technical Institute of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation;
Nanophotonics Laboratory, St Petersburg Academic University of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation,Saint-Petersburg State Polytechnical University, Saint-Petersburg 195251, Russian Federation;
Nanophotonics Laboratory, St Petersburg Academic University of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation,Saint-Petersburg State Polytechnical University, Saint-Petersburg 195251, Russian Federation,Microelectronics Laboratory, Ioffe Physico-Technical Institute of Russian Academy of Sciences, Saint-Petersburg 194021, Russian Federation;
quantum dot lasers; InAs/InGaAs quantum dots; multi-state lasing; GS-lasing; modulation p-doping;
机译:量子点激光器中多态激射现象的解析方法
机译:量子点激光器中多态激射现象的解析方法
机译:具有不同外部损耗的InAs / InGaAs量子点激光器中调制p掺杂水平对多态激光的影响
机译:P掺杂和未掺杂的1.3μminas / gaas量子点激光器的内在限制
机译:InGaAs量子点和量子点激光器的交替分子束外延和表征。
机译:基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
机译:p掺杂和未掺杂的1.3μmInAs / GaAs量子点激光器的固有局限性
机译:Inas / InGaas / Inp量子点注入激光器的辐射特性。