Radiative Characteristics of InAs/InGaAs/InP Quantum Dot Injection Lasers.

摘要

Quantum dot (QD) heterostructures have recently became the subject of the intensive research. tnjection lasers with an active region based on InGaAs/ AlGaAs QD have shown ultralow threshold current density (J(subth)). However the emission wavelength of QDs formed on GaAs substrate is limited by the value of 1.3 microns. It has been previously shown that the QD emission range can be extended up to 2 microns by embedding the InAs QDs into an InGaAs matrix grown on InP substrate. In this work we study threshold, tempemture and power characteristics of InAs/InGaAs/InP injection lasers.