机译:具有不同外部损耗的InAs / InGaAs量子点激光器中调制p掺杂水平对多态激光的影响
Nanophotonics Lab, St Petersburg Academic University, St Petersburg, Russian Federation,Peter the Great St Petersburg Polytechnic University, St Petersburg, Russian Federation;
Nanophotonics Lab, St Petersburg Academic University, St Petersburg, Russian Federation;
Nanophotonics Lab, St Petersburg Academic University, St Petersburg, Russian Federation,Peter the Great St Petersburg Polytechnic University, St Petersburg, Russian Federation,Ioffe Institute, St Petersburg, Russian Federation;
Nanophotonics Lab, St Petersburg Academic University, St Petersburg, Russian Federation;
Nanophotonics Lab, St Petersburg Academic University, St Petersburg, Russian Federation,Ioffe Institute, St Petersburg, Russian Federation;
Ioffe Institute, St Petersburg, Russian Federation;
Nanophotonics Lab, St Petersburg Academic University, St Petersburg, Russian Federation,Peter the Great St Petersburg Polytechnic University, St Petersburg, Russian Federation;
机译:p掺杂对InAs / InGaAs量子点激光器中二态激光的影响
机译:具有不同P型调制掺杂水平的Inas / Gaas自组装量子点激光器温度稳定性的简单理论模型
机译:具有InAs / InGaAs量子点的二极管微盘激光器中的高温激光
机译:非掺杂和p掺杂InAs / InGaAs半导体量子点激光器中多态激射现象的解析方法
机译:InGaAs量子点和量子点激光器的交替分子束外延和表征。
机译:基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
机译:量子阱组成对使用Inas / InGaas点井(DWELL)结构的量子点激光器性能的影响
机译:Inas / InGaas / Inp量子点注入激光器的辐射特性。