Simple Theoretical Model For The Temperature Stability Of Inas/gaas Self-assembled Quantum Dot Lasers With Different P-type Modulation Doping Levels

摘要

We have developed a simple theoretical model to account for the effects of different p-doping levels on the temperature-dependent performance of InAs/GaAs self-assembled quantum dot (QD) lasers. An assumption of equal occupation probabilities among QDs has been applied for operating conditions near the lasing threshold. Theoretical results indicate that there is an optimum p-doping region, which can provide the lowest temperature dependence of lasing threshold at room temperature.