Electrical characterization of Cr / p-ZnO Schottky contacts grown by pulsed laser deposition (PLD) on Si substrate

摘要

ZnO is an attractive wide band gap semiconductor and a promising material for transparent electronic applications such as short-wavelength LEDs [1,2], lasers [1] and UV detectors [3] because it can be obtained chemically stable and easily deposited on different semiconductor substrates (Si, InGaAs, GaAs) [4]. The use of ZnO in variety of applications is mainly due to its important properties of a direct band gap with an energy gap of 3.37 eV at RT and a large exciton binding energy of 60 meV.