Resistive switching mechanisms of High-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure

摘要

Now a day the resistive switching memory device is a promising candidate owing to its highly non-volatility, scalability potential, low power consumption and reliability aspects. The resistive memory devices using oxide materials such as HfO2, NiO, CuO, Cr doped SrTiO3, etc. have been reported by several groups. Recently, resistive switching memory devices using Ag doped GeSe or GeS solid electrolyte have been also reported [1]. Sakamoto et al. reported the resistive memory device in a Cu/Ta2O5/Pt structure [2]. Recently J.H.Jo et. al.[3] reported the high density crossbar memristive system using a-Si. The resistive memory device using Cu and IrOx/Gd2O3/W structure is not reported yet. In this study, resistive switching characteristic with a small via of 1μm in a Cu and IrOx/Gd2O3/W structure has been investigated for the first time.