Now a day the resistive switching memory device is a promising candidate owing to its highly non-volatility, scalability potential, low power consumption and reliability aspects. The resistive memory devices using oxide materials such as HfO2, NiO, CuO, Cr doped SrTiO3, etc. have been reported by several groups. Recently, resistive switching memory devices using Ag doped GeSe or GeS solid electrolyte have been also reported [1]. Sakamoto et al. reported the resistive memory device in a Cu/Ta2O5/Pt structure [2]. Recently J.H.Jo et. al.[3] reported the high density crossbar memristive system using a-Si. The resistive memory device using Cu and IrOx/Gd2O3/W structure is not reported yet. In this study, resistive switching characteristic with a small via of 1μm in a Cu and IrOx/Gd2O3/W structure has been investigated for the first time.
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机译：现在，由于其高度波动，可扩展性潜力，低功耗和可靠性方面，电阻切换存储器装置是一个有前途的候选者。几组报告了使用氧化物材料如HFO 2 ，NIO，CUO，CR掺杂SRTIO 3 等的电阻存储器。最近，已经报道了使用Ag掺杂GESE或GES固体电解质的电阻切换存储器件[1]。 Sakamoto等。报告了Cu / Ta 2 O 5 / PT结构[2]中的电阻存储器件[2]。最近J.H.Jo et。 al。[3]报告了使用A-Si的高密度横杆膜体系。使用Cu和Irox / Gd 2 O 3尚未报告电阻存储器件尚未报告。在该研究中，首次研究了Cu和Irox / Gd 2 O 3℃下具有1μm的电阻切换特性。
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