4H-SiC continuous wave SITs

摘要

4H SiC Static Induction Transistors (SITs) have shownnextraordinary power density exceeding 60 kW/cm². Thesendevices have shown pulsed power of 700 W in L-band and 300 W in S-bandnfor RADAR applications. In current SIT designs the footprint of thendevice dictates both gate to drain capacitance and the power density.nConsequently for common source circuits there is a trade-off betweennhigh frequency response-which calls for low gate to drain capacitancenfrom a small footprint; and high continuous wave (CW) output power-whichnrequires a large footprint so as to dissipate heat