4H-SiC continuous wave SITs

摘要

4H SiC Static Induction Transistors (SITs) have shown extraordinary power density exceeding 60 kW/cm/sup 2/. These devices have shown pulsed power of 700 W in L-band and 300 W in S-band for RADAR applications. In current SIT designs the footprint of the device dictates both gate to drain capacitance and the power density. Consequently for common source circuits there is a trade-off between high frequency response-which calls for low gate to drain capacitance from a small footprint; and high continuous wave (CW) output power-which requires a large footprint so as to dissipate heat.