High-voltage lateral RESURF MOSFETs on 4H-SiC

摘要

Owing to high critical electrical breakdown field and large energyngap, SiC has been established as the most promising candidate fornhigh-voltage power semiconductor devices. In the past few years, severalnhigh-voltage vertical MOS devices have been demonstrated in SiC, whereasnonly a 2.6 KV lateral SiC MOSFET has been reported so far. Lateralnintegrable REduced SURface Field (RESURF) devices are key buildingnblocks for high-voltage power ICs. In this work, we present the firstnexperimental demonstration of a n-channel lateral RESURF MOSFETnfabricated on 4H-SiC. The devices exhibit a blocking voltage in excessnof 1200 V with a best specific on-resistance of 4 ohm-cm²