Measurement of minority electron mobilities in SiGe base region ofnpn SiGe/Si heterojunction bipolar transistors

摘要

Although there have been several theoretical calculations reportednon the minority electron mobilities in p-type strained SiGe alloys,nexperimental data on such mobilities are lacking as their measurement isnnot straightforward. In this study, temperature-dependent minoritynelectron mobilities in highly doped Si_1-xGe_xn(0.2⩽x⩽0.4) base layers of npn SiGe/Si heterostructure bipolarntransistors have been measured for the first time