Straddle gate transistors: high I_on/I_offtransistors at short gate lengths

摘要

Straddle gate transistors are structures where the source/drainndoped extension regions of a transistor are separated from thentransistor control region through a low threshold-voltage side-wallnwhich turns on before the transistor, and provides high conductanceninjection. By providing for gate modulation of this region, thentransistor has effectively a longer channel length when it is off andnshorter channel length when it is on. We show, experimentally andntheoretically, how this leads to lower off currents, higher I_onn/I_off ratios and a path to smaller devices that are notnlimited by the constraints of shallow doping extensions