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Selection of gate length and gate bias to make nanoscale metal-oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation

机译:选择栅极长度和栅极偏置,以使纳米级金属氧化物半导体晶体管对统计的栅极长度变化和温度变化均不敏感

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摘要

Aggressive scaling of transistors leads to an ever-increasing amount of process variations. In this work, we studied the gate length dependency of on-current (I_(on)), off-current (I_(off)), effective drive current (I_(eff)), saturation threshold voltage (V_(th).(sat)), and temperature independent point (TIP). Experimental evidence show that the gate length dependency of TIP in nanoscale transistors is related to the V_(th,sat)versus L characteristics rather than velocity saturation. We found that I_(on),(I_(off))and I_(eff) of nanoscale transistors in the transition between reverse short channel effect (RSCE) and short channel effect (SCE) are less sensitive to gate length variation and temperature variation.
机译:晶体管的大规模缩放导致工艺变化量不断增加。在这项工作中,我们研究了导通电流(I_(on)),截止电流(I_(off)),有效驱动电流(I_(eff)),饱和阈值电压(V_(th))的栅极长度依赖性。 (sat))和​​温度无关点(TIP)。实验证据表明,纳米级晶体管中TIP的栅极长度依赖性与V_(th,sat)vs L特性有关,而不是与速度饱和有关。我们发现在反向短沟道效应(RSCE)和短沟道效应(SCE)之间的过渡中,纳米级晶体管的I_(on),(I_(off))和I_(eff)对栅极长度变化和温度变化较不敏感。 。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1304-1311|共8页
  • 作者单位

    Nanyang Technological University, School of Electrical and Electronic Engineering, Division of Microelectronics, Block S2.1, Nanyang Avenue, Singapore 639798, Republic of Singapore;

    rnNanyang Technological University, School of Electrical and Electronic Engineering, Division of Microelectronics, Block S2.1, Nanyang Avenue, Singapore 639798, Republic of Singapore;

    rnGLOBALFOUNDRIES SINGAPORE Pte Ltd, 60 Woodlands Industrial Park D St. 2, Singapore 738406, Republic of Singapore;

    rnGLOBALFOUNDRIES SINGAPORE Pte Ltd, 60 Woodlands Industrial Park D St. 2, Singapore 738406, Republic of Singapore;

    rnGLOBALFOUNDRIES SINGAPORE Pte Ltd, 60 Woodlands Industrial Park D St. 2, Singapore 738406, Republic of Singapore;

    rnGLOBALFOUNDRIES SINGAPORE Pte Ltd, 60 Woodlands Industrial Park D St. 2, Singapore 738406, Republic of Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    temperature-independent-point; MOSFETs; halo implant;

    机译:温度无关点MOSFET;晕圈植入物;
  • 入库时间 2022-08-18 01:34:59

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