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InGaAs/InP avalanche photodiode with separated absorption, charge and multiplication layers

机译：InGaAs / InP雪崩光电二极管具有独立的吸收层，电荷层和倍增层

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《Rural Electric Power Conference, 1988》|1988年|p.11-13|共3页
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Hasko D.;
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正文语种 eng
中图分类自动化技术、计算机技术;
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1. Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes [J] . Ma C.L.F., Deen M.J. IEEE Journal of Quantum Electronics . 1995,第11期

机译：InP-InGaAs雪崩光电二极管在单独的吸收，分级，电荷和倍增中的倍增
2. Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes [J] . Parks J.W., Smith A.W. IEEE Transactions on Electron Devices . 1996,第12期

机译：分别吸收，分级，电荷和倍增InP / InGaAs雪崩光电二极管的器件灵敏度和增益饱和的理论研究
3. Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes [J] . Ma C.L.F., Deen M.J. IEEE Transactions on Electron Devices . 1995,第5期

机译：InP / InGaAs雪崩光电二极管分别吸收，分级，充电和倍增时击穿电压的温度依赖性
4. Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption grading charge and multiplication (SAGCM) avalanche photodiodes (APDs) [C] . Serguei An, Nortel Technology Ltd. (Canada), Simon Fraser Univ ., Conference on photodetectors: materials and devices . 1998

机译：利用InP / InGaAs分离吸收分级电荷和乘法（SAGCM）雪崩光电二极管（APD）的乘法噪声特性测量InP中的电离系数
5. Separate absorption, grading, charge and multiplication avalanche photodiodes [D] . Tarof, Lawrence E. 1993

机译：单独的吸收，分级，电荷和倍增雪崩光电二极管
6. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes [O] . Alan C. Farrell, Pradeep Senanayake, Chung-Hong Hung, -1

机译：等离子体场限制用于InGaAs纳米柱雪崩光电二极管中的单独吸收-倍增
7. Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling [O] . Abedin, M. Nurul, Xiao, Yegao, Bhat, Ishwara 2005

机译：基于时域建模的InP / InGaAs雪崩光电二极管倍增层厚度的性能相关性

InGaAs/InP avalanche photodiode with separated absorption, charge and multiplication layers

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