首页> 外文会议>ROMOPTO 2003: Seventh Conference on Optics >Pulsed laser deposition of chromium oxides thin films: chemical stabilization by capping and doping
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Pulsed laser deposition of chromium oxides thin films: chemical stabilization by capping and doping

机译:脉冲激光沉积氧化铬薄膜:通过封盖和掺杂实现化学稳定

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The half-metallic ferromagnetic chromium dioxide (T_c = 390 K) is a prospective material for spintronics applications. We employed pulsed laser deposition (PLD) to grow thin films of various chromium oxides. The experiments have been carried out in oxygen at different dynamical pressures, using a KrF~* laser source (λ = 248nm, τ_(FWHM) ≥ 30 ns), various chromium oxide targets, such as CrO_3, Cr_8O_(21) (the latter ones both pure and doped with Y and Sb respectively, for stabilization purposes) and sapphire substrates (c-cut). We optimized the laser fluence. To avoid CrO_2 reduction to Cr_2O_3 in very thin films when kept in atmospheric air, we applied a protection with gold. X-ray diffraction, electron microscopy and Raman spectroscopy evidenced uniform films containing CrO_2.
机译:半金属铁磁性二氧化铬(T_c = 390 K)是自旋电子学应用的潜在材料。我们采用脉冲激光沉积(PLD)来生长各种氧化铬的薄膜。实验是使用KrF〜*激光源(λ= 248nm,τ_(FWHM)≥30 ns),各种氧化铬靶材(例如CrO_3,Cr_8O_(21))在不同动压的氧气下进行的分别用于纯和掺杂Y和Sb(用于稳定的目的)和蓝宝石衬底(C形切割)。我们优化了激光通量。为了避免在大气中保存时非常薄的薄膜中CrO_2还原为Cr_2O_3,我们采用了金保护层。 X射线衍射,电子显微镜和拉曼光谱证实含有CrO_2的均匀膜。

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