GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

摘要

This paper reviews the recent progress towards III-nitride intersubband devices based on either quantum wells or quantum dots. We first discuss the specific features of electron confinement in ultrathin GaN/AlN layers Recent achievements on fast electro-optical modulator devices are described. We then discuss a new concept of III-nitride quantum well detectors based on the quantum cascade scheme, which opens prospects for very fast devices. We finally review the progress towards light-emitting devices and saturable absorbers based on GaN/AlN quantum dots.