Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates

机译：可制造的MBE生长工艺，用于大直径基板上的基于Sb的光电探测器材料

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Antimony-based photodetector materials have attracted considerable interest for their potential and demonstrated performance in infrared detection and imaging applications. Mid-wavelength infrared detector has been demonstrated using bulk InAsSb/AlAsSb-ba

机译：基于锑的光电探测器材料因其潜力吸引了相当大的兴趣，并在红外探测和成像应用中表现出出色的性能。已经使用块状InAsSb / AlAsSb-ba演示了中波长红外探测器

著录项

来源
《Quantum sensing and nanophotonic devices IX.》|2012年|p.1-6|共6页
会议地点 San Francisco CA(US)
作者
Dmitri Lubyshev; Yueming Qiu; Joel M. Fastenau; Amy W. K. Liu;
展开▼
作者单位

IQE, Inc. (USA);

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类 TP212;TP212;
关键词

相似文献

外文文献
中文文献
专利

1. Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE [J] . Fastenau, J.M., Lubyshev, D., Qiu, Y., Infrared physics and technology . 2013,第Null期

机译：MBE制造的100 mm GaSb衬底上的基于Sb的IR光电探测器外延片
2. MBE growth of GaN pn-junction photodetector on AlN/Si(111) substrate with Ni/Ag as ohmic contact [J] . Z. Mohd Yusoff, A. Baharin, Z. Hassan, Superlattices and microstructures . 2013,第Apra期

机译：以Ni / Ag为欧姆接触的AlN / Si（111）衬底上GaN pn结光电探测器的MBE生长
3. Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE [J] . T.Yodo, H.Ando, H.Tsuchiya Journal of Crystal Growth . 2001,第期

机译：生长前衬底氮化对ECR-MBE在Si（001）和Si（111）衬底上生长的GaN异质外延层初始生长过程的影响
4. MBE Growth of Sb-based nBn Photodetectors on Large Diameter GaAs Substrates [C] . Dmitri Lubyshev, Joel M. Fastenau, Yueming Qiu, Conference on infrared technology and applications . 2013

机译：大直径GaAs衬底上基于Sb的nBn光电探测器的MBE生长
5. MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam. [D] . Park, Yeonjoon. 2003

机译：MBE生长和III / V氮化物半导体薄膜结构的加工：氮化镓铟镓的生长以及离子束和电子束聚焦的纳米加工。
6. On the Heuristic Procedure to Determine Processing Parameters in Additive Manufacturing Based on Materials Extrusion [O] . Georgijs Bakradze, Egīls Arājs, Sergejs Gaidukovs, 2020

机译：基于材料挤出的加性制造中测定处理参数的启发式程序
7. SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE [O] . Laiq Hussain, Håkan Pettersson, Qin Wang, 2018

机译：通过使用MBE在GaAs基材上生长的基于SB的癫痫发光的Swir-LWIR光致发光

Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates

摘要

著录项

相似文献

相关主题

期刊订阅