Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom;
Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark;
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
London Centre for Nanotechnology, University College London, London WC1H OAH, United Kingdom;
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Nanowire; droplet size; self-catalyzed; Gibbs-Thomson effect; GaAsP;
机译:液滴尺寸对自催化三元GaAsh纳米线生长的影响
机译:液滴尺寸对自催化三元GaAsP纳米线生长的影响
机译:高质量的自序列高清纳米线的液滴操纵和水平生长
机译:液滴尺寸对高质量自催化GaAsP纳米线生长的影响
机译:催化剂介导的III-V族纳米线的生长和光学性质:金催化砷化镓和自催化磷化铟
机译:自催化InAs / InSb轴向异质结构纳米线的生长:实验和理论
机译:液滴尺寸对高质量自催化GaAsP纳米线生长的影响