Selective-Area Growth of InAs Nanowire Arrays on Si_3N_4/Si(111) by Molecular Beam Epitaxy

摘要

InAs nanowires directly integrated on Si platform show great promise in fabricating next generation mid-infrared optoelectronic devices. In this study we demonstrated the growth of catalyst-free, selective-area InAs nanowire arrays on electron beam patterned Si_3N_4/Si(111) by molecular beam epitaxy. Growth parameters were studied, and nanowire growth kinetic's dependence on patterned-mask hole diameter and interwire distance was investigated. Under certain growth conditions, nanowire diameter was found to be relatively independent of nanohole diameter and pitch. We also realized the growth of randomly-nucleated, self-assembled nanowires on Si (111) and investigated the temperature, flux influence on nanowire morphology.