Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions

摘要

Abstract: Recent developments in MOCVD growth of Hg$-1$MIN@x$/Cd$-x$/Te photodiodes using the interdiffused multilayer process are reported. Iodine doping of HgCdTe is described using ethyl iodide. Using ethyl iodide, the iodine doping level can be controlled in the range of 7 $MUL 10$+14$/ $MIN 2 $MUL 10$+18$/ cm$+$MIN@3$/ without any memory effect. Activation of the iodine as a singly ionized donor is near 100% at concentrations $LS 1 $MUL 10$+17$/ cm$+$MIN@3$/. Ethyl iodide was not found to react with the other organometallic precursors and abrupt dopant profiles are obtained. The iodine doped HgCdTe films exhibit 80 K electron mobilities $GREQ 1 $MUL 10$+5$/ cm$+2$//V-s, auger limited lifetimes of approximately 1 $mu@s for concentrations of (1-3)$MUL10$+15$/ cm$+$MIN@3$/, and x-values approximately 0.22. LWIR p-on-n heterojunctions have been grown in situ using iodine doping for the n-type absorber layer and arsenic doping for the p- type cap layer. Detailed characterization data for the photodiodes are reported. !26