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Dark Currents in a Fully-Depleted LWIR HgCdTe P-on-n Heterojunction: Analytical and Numerical Simulations

机译:全耗尽的LWIR HGCDTE P-ON-N异质结中的黑暗电流:分析和数值模拟

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In this paper, we use the theory of Evans and Landsberg, which is a generalization of the Shockley-Read-Hall recombination statistics in the space charge region (SCR), to include effects of Auger and radiative recombination processes that are also of origin in the SCR. Using analytical expressions for the current density, we calculate the total dark current density for a variety of conditions. Contributions include radiative and Auger transitions of origin in both the quasi-neutral region and the SCR. Numerical simulations are used to assess the nature of the limitations associated with the analytical calculation in the n-extrinsic region (, where is the doping concentration and is the intrinsic carrier concentration), and to extend the calculations to operating temperatures in the intrinsic region (). Major findings include the observation that in a fully depleted double-layer planar hetero-structure, at a reverse bias voltage sufficiently high to suppress the Auger process, SRH centers are not limiting, and the dark current is due to radiative transitions of origin in the n-side SCR. From the numerical simulations, while the Auger recombination rate changes drastically with varying the carrier concentration (such as applying reverse bias), the radiative recombination rate remains nearly invariant to varying the carrier concentration, and, as such, does not appreciably change with increasing reverse bias. Using the theory of van Roosbroeck and Shockley, the radiative recombination rate is obtained by integrating the measured optical absorption coefficient over all photon energies. Hence, the theory links the measured absorption coefficient to the measured dark current density for conditions in which the dominant current component is due to radiative recombination. Finally, the numerical simulations reveal, in both the n-extrinsic and intrinsic operating regions, that, under sufficient conditions, the detector is radiatively limited.
机译:在本文中,我们使用Evans和Landsberg的理论,这是空间电荷区域(SCR)中震撼读音乐会重组统计数据的概括,包括螺旋钻和辐射重组过程的影响scr。使用分析表达式的电流密度,我们计算各种条件的暗电流密度。贡献包括在准中立区域和SCR中的起源的辐射和螺旋钻过渡。数值模拟用于评估与N外部区域中的分析计算相关的限制的性质(在其中掺杂浓度,是内在载流子浓度),并将计算延伸到内在区域中的工作温度( )。主要发现包括观察到在完全耗尽的双层平面杂结构中,在相反的偏置电压足以抑制螺旋钻过程,SRH中心不是限制性的,并且暗电流是由于辐射转变n侧scr。根据数值模拟,而螺旋钻重组率随着载流子浓度(例如施加反向偏压)而变化,辐射重组率几乎不变,以改变载流子浓度,并且因此,随着越来越越来越大,不明显变化偏见。使用Van Roosbroeck和Shockley的理论,通过将测量的光学吸收系数集成在所有光子能量上来获得辐射重组率。因此,该理论将测量的吸收系数与测量的暗电流密度联系起来,其中主流分量由于辐射重组而导致的条件。最后,数值模拟在N外形和内在操作区域中显示,在充分条件下,检测器被辐射有限。

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