p-on-n HgCdTe红外探测器机理分析与性能计算

摘要

Based on the properties of HgCdTe materials and the physics of the p-on-n HgCdTe detector, a 3-D theoretical detector modeling and calculation were carried out. The p-on-n HgCdTe detector performances in short, middle and long wavelengths were calculated in terms of detectivity versus device working temperatures with cut-off response at 3, 5, and 10.5μm, respectively. The results show that the performance of p-on-n HgCdTe detectors can meet the requirements of future high-end infrared system for high sensitivity and high working temperature detectors in all short, middle and long wavelengths.%　　根据HgCdTe材料特性和p-on-n HgCdTe红外探测器结构，建立了p-on-n HgCdTe红外探测器三维数理模型。通过对三维理论模型的求解，得到探测器内部载流子的输运特性，实现了对不同波段、不同工作温度p-on-n HgCdTe红外探测器探测率的理论计算。计算结果表明：p-on-n HgCdTe红外探测器优异的高灵敏度和高温特性，能在红外短波、中波和长波3个波段上全面满足未来红外系统对高性能红外探测器的需求。