MOLECULAR DYNAMIC APPROACH OF SiC LAYERS GROWTH IN CVD AND PECVD REACTORS

摘要

In this study, a calculation code has been developed in order to simulate the silicon carbide layers growth at atomic scale. The principle of this code is based on an algorithm of kinetic Monte-Carlo. Two cases were studied: classical CVD and PECVD. In the case of classical CVD, five species are taken into account: CH4, CH3, SiH_4, SiH_2 and H. For PECVD, SiH_3 and CH_2 radicals are also added. The results of simulation show that it is possible, by carrying out statistical assessments on the evolution of the population of the particles, to analyze the mechanism of deposition. Indeed, the calculation code allows us to determine the sticking coefficient on various species, composition of films and particularly the deposition rate.