FILM COMPOSITION AND ITS PROFILE CONTROL OF HFSION FOR POLY-SI GATE CMOSFET WITH HIGH PERFORMANCE AND RELIABILITY

摘要

HfSiON film is one of the most promising candidates of alternative gate dielectrics instead of the current SiO2 film that has used for more than several decays. Poly-Si/HfSiON gate stack for low standby power (LSTP) CMOS devices are discussed by focusing effects of film composition and its profile of HfSiON. Nitrogen profile engineering in HfSiON has much advantage for obtaining not only higher carrier mobility but also thinner EOT and lower gate leakage current. Low Hf concentration is better at devices performance, post process robustness and reliability. The optimized HfSiON film shows acceptable performance and reliability for hp65nm LSTP requirement of ITRS roadmap.