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Luminescence characteristics of single lnGaN quantum wells grown on bulk GaN as compared to sapphire substrates

机译：与蓝宝石衬底相比，在块状GaN上生长的单个lnGaN量子阱的发光特性

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《Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices 》|2005年|59-61|共3页
会议地点 Beijing(CN)
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正文语种 eng
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1. Photoluminescence Characteristics and Pit Formation of InGaN/GaN Quantum-Well Structures Grown on Sapphire Substrates by Low-Pressure metalorganic Vapor Phase Epitaxy [J] . UCHIDA KENJI, KAWATA MASAHIKO, YANG TAO, Journal of Electronic Materials . 1999 ,第3期

机译：低压金属有机气相外延生长在蓝宝石衬底上的InGaN / GaN量子阱结构的光致发光特性和坑形成
2. Photoluminescence Characteristics and Pit Formation of InGaN/GaN Quantum-Well Structures Grown on Sapphire Substrates by Low-Pressure Metalorganic Vapor Phase Epitaxy [J] . KENJI UCHIDA, MASAHIKO TA, TAO YANG Journal of Electronic Materials . 1999 ,第3期

机译：低压金属有机气相外延生长在蓝宝石衬底上的InGaN / GaN量子阱结构的光致发光特性和坑形成
3. Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates [J] . Tomoya Sugahara, Shiro Sakai IEICE Transactions on Electronics . 2000 ,第4期

机译：位错在块状GaN和蓝宝石衬底上生长的InGaN / GaN量子阱中的作用
4. Luminescence characteristics of single InGaN quantum wells grown on bulk GaN as compared to sapphire substrates [C] . J. C. Brooksby, S. Srinivasan, J. Mei, Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices . 2005

机译：与蓝宝石衬底相比，在块状GaN上生长的单个InGaN量子阱的发光特性
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy [O] . Heng Li, Hui-Yu Cheng, Wei-Liang Chen, -1

机译：通过共焦拉曼光谱和光致发光光谱法对图案化蓝宝石衬底上生长的GaN基发光二极管进行三维表征
7. Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates [O] . Tan, L.-T., Martin, R.W., O'Donnell, K.P., 2008

机译：在独立式GaN和蓝宝石衬底上生长的接近晶格匹配的GaN / AlInN量子阱的光致发光

Luminescence characteristics of single lnGaN quantum wells grown on bulk GaN as compared to sapphire substrates

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