Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates

摘要

Dislocation properties in InGaN/GaN Quantum Wells and GaN grown on bulk GaN and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) were characterized using cathodoluminescnece (CL), transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL). It was clearly demonstrated that dislocations act as nonradiative re- Combination centers in both n-type (undoped and Si-doped)GaN and InGaN layers.