Strain-compensated InGaAs/InAlAs quantum cascade lasers

摘要

We report on the realization of 5.5μm quantum cascade lasers (QCLs) based on strain-compensated In_xGa_(1-x)As/In_yAl_(1-y)As grown on InP substrate using molecular beam epitaxy. High temperature operation up to 50℃ was realized for uncoated 20μm wide and 2 mm long devices. The output power of at least 36mW at room temperature was achieved.